NVIDIA Vera Rubin shipments disrupt storage supply and demand, NAND flash prices rebound violently

Kuai Technology reported on August 19 that according to TrendForce reports, as the shipments of NVIDIA's new generation Vera Rubin platform gradually increase, its storage demand effect has extended from HBM to the NAND flash memory field. Market data shows that the spot price of TLC NAND flash memory has continued to rebound since hitting a low in June. This week's quotation increased by 4.97% from last week, and the cumulative increase from three weeks ago reached 11.6%. Although most of NVIDIA's TLC NAND supply is locked through long-term agreements, the actual demand brought about by the platform's increased volume still exerts transmission pressure on the spot market, driving prices up continuously. Previously, Samsung has established cooperation with Nvidia in the fields of general DRAM, HBM and wafer foundry, and has now further expanded the cooperation to NAND flash memory. It is reported that Samsung has supplied 9th generation V?NAND flash memory to Nvidia in large quantities and is actively promoting the mass production of 10th generation V?NAND to meet the storage needs related to Nvidia's CMX architecture. At the same time, Kioxia launched the new CM10 series PCIe 6.0 SSD this year, which is equipped with the 10th generation BiCS FLASH TLC flash memory for the first time and is specially designed for the CMX architecture. The product's sequential read performance is approximately 92% higher than the previous generation, and random read performance is approximately 85% higher. It also supports direct cold plate liquid cooling, which has significant advantages in high-performance computing scenarios. Overall, NVIDIA's AI platform's impact on the storage ecosystem is spreading from HBM to NAND, and the original supply structure and product iteration rhythm are also accelerating adjustments. The NAND market is expected to continue to benefit from the AI ​​computing power expansion cycle.