美光预告 G11 NAND：超 400 层堆叠，双倍密度，2027H2 产能爬坡

IT House reported on October 22 that Micron (Micron) held its 2026 annual technology webinar yesterday local time, looking forward to DRAM, pan-HBM, NAND and SSD. This article focuses on the flash memory category. Micron this time previewed its G11 NAND flash memory, which is expected to ramp up production capacity in 2027H2. The company seems to have skipped the G10 generation. G11 NAND stacks more than 400 layers and uses wafer-to-wafer bonding technology. The storage density calculated by area is about 2 times that of the existing 276-layer G9 NAND. It can also achieve up to 1.5 times the I/O rate and reduce data transmission energy consumption by more than 25%. After G11, Micron plans to introduce breakthrough high-mobility materials into NAND to achieve ultra-dense cell architecture and enhance energy-saving attributes. Micron introduced two AI-class data center-level NAND designs, namely SLC-based GPU direct-connect IOPS optimization products and bandwidth optimization products similar to HBF definition. Micron also showcased its full range of AI-optimized storage solutions,